'ists.su c=~>e.ml-l-onauctoi , li ne. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 scr c140|2n3649-53 :141(2n3654-s8 c140 and c141 series of silicon controlled rectifiers are reverse blocking triode thyristor semiconductor devices designed primarily for high-frequency power switching applications which require blocking voltages up to 400 volts and load currents up to 35 amperes rms, at frequencies up to 25 khz. for line commutated applications (phase control, ac switching) at power line frequencies, up to 35 amperes rms, the following preferred scr types are recommended: c35 (pub. #160.20), and c137 (pub. #160.45). the c140 and c141 series feature: ? contoured junction surfaces for high-voltage stability ? shorted emitters for high dv/dt (200v/msec) ? distributed gates for high di/dt (400a//*sec) ? a a sinusoidal waveform 190' conduction 63-c case 400v blocking "nj \) ' \ io>js (ci4i ) i5*i? (ci*q) x / ?~-~ x ^ x 5oo frequency in ik 2k 5k iok 2ok 24k hebt2 equipment designers can use the c140 and c141 scr's in demanding applications such as: ? choppers ? inverters ? regulated power supplies ? cycloconverters ? ultrasonic generators ? high frequency lighting ? sonar transmitters ? induction heaters ? radio transmitters this specification sheet uses a simpligied and easy- to-use rating system which graphically presents: ? case temperature ? peak anode current ? dv/dt and turn-off times for rectangular and sinusoidal anode-current wave- forms nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
yx *- '?! "? tr *t -, 1 1 * *v?%-? ?"- ' , tym>* - , -. ,'-/". ? . * - c140p (2n3649) c141f (2n3654) C140A (2n3650) c141a (2n3655) c140b (2n3651) c141b (2n3656) c140c (2n3652) c141c (2n3657) c140d (2n3653) c141d (2n3658) dc forward blocking voltage vro (wr *tc = -6s'c?o + 1208c 50 volts* 100 volts* 200 volts* 300 volts* 400 volts* peak forward voltage pfv (1) 'to = ? 6scto -mzo'c 50 volts* 100 volts* 200 volts* 300 volts* 400 volts* dc reverse voltage v?o (1) . to = -65ecto +120*c 50 volts* 100 volts* 200 volts* 300 volts* 400 volts* non-repetitive peak reverse voltage (half sin* wav?) vrqh (non-r?p) (1) tc =. -65ecto 4-uo^c 75 volts* 150 volts* 300 volts* 400 volts* 500 volts* turn-on current limit (see chart 10). rms forward current, on-state dc forward current, on-state, tc = 40cc_ . , _400 amperes per /j.sec* 35 amperes 25 amperes* peak rectangular surge forward current (5.0msec width, tr = 50/^sec) ifm (surge) 180 amperes* ft (for fusing) 165 ampere2 seconds (for times 5 1,0 millisecond) peak gate power dissipation, pgm . ? ? ? - 40 watts* average gate power dissipation, pg 1.0 watt* peak reverse gate voltage, vgrm 10 volts* peak forward gate current, igfm- reverse recovery energy ? storage temperature, tstg operating temperature, tc stud torque fi.4 amperes* 0.002 watt sec. -65cto+150c* -65cto+120c* _30 lb-in (35 kg-cm) characteristics test symbol min. typ, max. units test conditions pulse circuit commutated turn-ofp time c140 (2n3649-53) c141 (2n3654-58) tof, (pulse) 15* 10* msec msec see charts 1 and 4. tc = +115c, ifm ~ 100 amps, approx. sinusoidal current waveform (t, ? 1.0 msec, tp = 2.05 ^-5 ^sec), no delay reactor, pulse rep. rate = 400 hz. vfxm ? rated, vrxm s 200 volts, vbx ?30 volts. rate of rise of reap- plied forward blocking voltage (dv/dt) ? 200 volts/vsec (linear ramp). gate supply: 20 volts open circuit, 20 ohms, 1.5 msec square wave pulse, rise time = 0.1 ,usec max. -circuit, commutated " .-jpurn-opp '?ft ;..4$v amp? (60 pulse), rectangular current waveform, teat repetition rate,: 60 v = rav= rated ,, e tot -*,*-?' dc reverse or forward blocking current (1) c140f (2n3649) c141f (2n3654) C140A (2n3650) c141a (2n3655) c140b (2n3651) c141b (2n3656) c140c (2n3652) c141c (2n3657) c140d (2n3653) c141d (2n3658) dc reverse or forward blocking current (1) c140f (2n3649) ft ah? /9vtoaka\a '(2n3650) c141a (2n3655) c140b (2n3651) c141b (2n3656) c140c (2n8652) c141c (2n3657) c140d (2n3653) c141d (2n3658) gate trigger current gate trigger voltage peak on-voltage holding current ? = ' * " ? .\; ~. ?_ j?;;. ,. :?>"'_? .],.??-, effective thermal resistance (dc) rate of rise of forward blocking voltage that will not turn on scr symtol irq or ifo inoor ifq "s.. iot vot vr ibo ~ ? ?j-c dv/dt (.mar min. " ? ? ? ? ? ? 0.25* ? ? ;? ,; ? 200* acteki fw. 1.0 1.0 1.0 1.0 1.0 5.0 6.0 6.0 5.0 3.5 80 150 1.5 ? 2.0 1.8 ?76 '_ ?*" *". * ' l&u * . 0.85 -" *"? btltb ( ^muufcv- 6.0 6.0 6.0 5.5 4.0 6.0* 6.0* 6.0* '8 5.6* 4.0* 180 500* 3.0 ? 4.5* 2.05* ' "k'f.fi ? wl#v 1.7* """"* cent.) tunlti madc madc madc madc madc , "",'. :," madc madc 'madc madc madc madc madc vdc : vdc vdc v **' ? '* * >il c/watt volts/ c140,c1 ".<$v$$w&iitn tc = + 25c vro r= vro = 50v dc vho = vro = 100v dc vro = vro - 200v dc vro = vfo = 300v dc vro = vfo = 400v dc ** ' *' \ vm = vto = 50vdc itc ...-..;.;-: \' v?>a:vw=:3oovi)c *''<- ?^?-i'i':'c ' rl = 4 ohms ri, = 2 ohms , to = +26"c, v? ss 6 vdc, " -. to = +120-c, v? = rated, rl = 200 ohms '? \c = -65'c, vrz = 6vdc, rl = 2 ohms ' , ' tr - +25 c, ik? = 25 a 1msec. pulse. duty cycle = 1 % jc^it; z^oha^^^c^j^^a^ tc =s +120*c, gate open circuited. ' ? . vro = rated ???,.? :_:- ,,, ??'y'-t%-*u>ft^. 41
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